Datenblatt-Suchmaschine für elektronische Bauteile |
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STB80NF55-06 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STB80NF55-06 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 17 page STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical characteristics 5/17 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 320 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=80A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, di/dt = 100A/µs, VDD=35V, TJ = 150°C 100 0.32 6.5 ns µC A |
Ähnliche Teilenummer - STB80NF55-06 |
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Ähnliche Beschreibung - STB80NF55-06 |
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