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STU60N3LH5 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STU60N3LH5 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 15 page STD60N3LH5 - STU60N3LH5 Electrical ratings 3/15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 30 V VDS Drain-source voltage (VGS = 0) @ TJMAX 35 V VGS Gate-Source voltage ± 22 V ID (1) 1. Limited by wire bonding Drain current (continuous) at TC = 25°C 48 A ID Drain current (continuous) at TC = 100°C 42.8 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 192 A PTOT Total dissipation at TC = 25°C 60 W Derating factor 0.4 W/°C EAS (3) 3. Starting Tj = 25°C, Id = 24A, Vdd = 12V Single pulse avalanche energy 160 mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.5 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Tj Maximum lead temperature for soldering purpose 275 °C |
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