Datenblatt-Suchmaschine für elektronische Bauteile |
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ES3G Datenblatt(PDF) 1 Page - Vishay Siliconix |
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ES3G Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 5 page ES3F & ES3G Vishay General Semiconductor Document Number: 88590 Revision: 20-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 300 V, 400 V IFSM 100 A trr 35 ns VF 1.1 V TJ max. 150 °C DO-214AB (SMC) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ES3F ES3G UNIT Device marking code EF EG Maximum repetitive peak reverse voltage VRRM 300 400 V Working peak reverse voltage VRWM 225 300 V Maximum RMS voltage VRMS 210 280 V Maximum average forward rectified current at TL = 110 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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