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IRF9Z24PBF Datenblatt(PDF) 1 Page - Vishay Siliconix

Teilenummer IRF9Z24PBF
Bauteilbeschribung  Power MOSFET
Download  8 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF9Z24PBF Datenblatt(HTML) 1 Page - Vishay Siliconix

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Document Number: 91090
www.vishay.com
S-Pending-Rev. A, 20-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRF9Z24, SiHF9Z24
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = - 11 A (see fig. 12).
c. ISD ≤ - 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) (Ω)VGS = - 10 V
0.28
Qg (Max.) (nC)
19
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
Single
S
G
D
P-Channel MOSFET
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free
IRF9Z24PbF
SiHF9Z24-E3
SnPb
IRF9Z24
SiHF9Z24
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
ID
- 11
A
TC = 100 °C
- 7.7
Pulsed Drain Currenta
IDM
- 44
Linear Derating Factor
0.40
W/°C
Single Pulse Avalanche Energyb
EAS
240
mJ
Repetitive Avalanche Currenta
IAR
- 11
A
Repetitive Avalanche Energya
EAR
6.0
mJ
Maximum Power Dissipation
TC = 25 °C
PD
60
W
Peak Diode Recovery dV/dtc
dV/dt
- 4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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