Document Number: 91067

www.vishay.com

S-Pending-Rev. A, 02-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRF840LC, SiHF840LC

Vishay Siliconix

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

This new series of low charge Power MOSFETs achieve

signiticantly lower gate charge over conventional MOSFETs.

Utilizing

the

new

LCDMOS

technology,

the

device

improvements are achieved without added product cost,

allowing for reduced gate drive requirements and total

system savings. In addition, reduced switching losses and

improved efficiency are achievable in a variety of high

frequency applications. Frequencies of a few MHz at high

current are possible using the new low charge MOSFETs.

These device improvements combined with the proven

ruggedness and reliability that are characteristic of Power

MOSFETs offer the designer a new standard in power

transistors for switching applications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

500

0.85

39

10

19

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220

Lead (Pb)-free

IRF840LCPbF

SiHF840LC-E3

SnPb

IRF840LC

SiHF840LC

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

8.0

A

5.1

28

Linear Derating Factor

1.0

W/°C

510

mJ

8.0

A

13

mJ

Maximum Power Dissipation

125

W

dV/dt

3.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply