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IRF9610PBF Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer IRF9610PBF
Bauteilbeschribung  Power MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
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Document Number: 91080
2
S-Pending-Rev. A, 20-Jun-08
IRF9610, SiHF9610
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-62
°C/W
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-6.4
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 200
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.23
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 200 V, VGS = 0 V
-
-
- 100
µA
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
-
-
- 500
Drain-Source On-State Resistance
RDS(on)
VGS = - 10 V
ID = -0.90 Ab
--
3.0
Ω
Forward Transconductance
gfs
VDS = - 50 V, ID = - 0.90 Ab
0.90
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 10
-
170
-
pF
Output Capacitance
Coss
-50
-
Reverse Transfer Capacitance
Crss
-15
-
Total Gate Charge
Qg
VGS = - 10 V
ID = - 3.5 A, VDS = - 160 V,
see fig. 11 and 18b
--
11
nC
Gate-Source Charge
Qgs
--
7.0
Gate-Drain Charge
Qgd
--
4.0
Turn-On Delay Time
td(on)
VDD = - 100 V, ID = - 0.90 A,
RG = 50 Ω, RD = 11 Ω, see fig. 17b
-8.0
-
ns
Rise Time
tr
-15
-
Turn-Off Delay Time
td(off)
-10
-
Fall Time
tf
-8.0
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
- 1.8
A
Pulsed Diode Forward Currenta
ISM
--
- 7.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 1.8 A, VGS = 0 Vb
--
- 5.8
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/µsb
-
240
360
ns
Body Diode Reverse Recovery Charge
Qrr
-1.7
2.6
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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