Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFB18N50KPBF Datenblatt(PDF) 4 Page - Vishay Siliconix |
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IRFB18N50KPBF Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91100 4 S-80567-Rev. A, 20-Jun-08 IRFB18N50K, SiHFB18N50K Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 30 60 90 120 150 0 4 8 12 16 20 Q , Total Gate Charge (nC) G I = D 17A V = 100V DS V = 250V DS V = 400V DS 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 150 C J ° T = 25 C J ° 0.1 1 10 100 1000 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C ° ° J C V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms |
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