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IRFBC40LCPBF Datenblatt(PDF) 1 Page - Vishay Siliconix

Teilenummer IRFBC40LCPBF
Bauteilbeschribung  Power MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFBC40LCPBF Datenblatt(HTML) 1 Page - Vishay Siliconix

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Document Number: 91114
www.vishay.com
S-81567-Rev. A, 28-Jul-08
1
Power MOSFET
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V, VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
cost, allowing for reduced gate drive requirements and total
system savings. In addition reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge Power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 6.2 A (see fig. 12).
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
600 V
RDS(on) (Ω)VGS = 10 V
1.2
Qg (Max.) (nC)
39
Qgs (nC)
10
Qgd (nC)
19
Configuration
Single
N-Channel MOSFET
G
D
S
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free
IRFBC40LCPbF
SiHFBC40LC-E3
SnPb
IRFBC40LC
SiHFBC40LC
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Gate-Source Voltage
VGS
± 30
V
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
6.2
A
TC = 100 °C
3.9
Pulsed Drain Currenta
IDM
25
Linear Derating Factor
1.0
W/°C
Single Pulse Avalanche Energyb
EAS
530
mJ
Repetitive Avalanche Currenta
IAR
6.2
A
Repetitive Avalanche Energya
EAR
13
mJ
Maximum Power Dissipation
TC = 25 °C
PD
125
W
Peak Diode Recovery dV/dtc
dV/dt
3.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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