Document Number: 91121

www.vishay.com

S-Pending-Rev. A, 23-Jun-08

3

IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

c. Uses IRFBF20/SiHFBF20 data and test conditions.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

1.7

A

--

6.8

Body Diode Voltage

--

1.5

V

Body Diode Reverse Recovery Time

-

350

530

ns

Body Diode Reverse Recovery Charge

-

0.85

1.3

µC

Forward Turn-On Time

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

S

D

G