ADF4350BCPZ datasheet(6/28 Pages) AD

Teilenummer	ADF4350BCPZ

Bauteilbeschribung	Wideband Synthesizer with Integrated VCO

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Hersteller	AD [Analog Devices]

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ADF4350

Rev. 0 | Page 6 of 28

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Rating

AVDD to GND1

−0.3 V to +3.9 V

AVDD to DVDD

−0.3 V to +0.3 V

VVCO to GND

−0.3 V to +3.9 V

VVCO to AVDD

−0.3 V to +0.3 V

Digital I/O Voltage to GND

−0.3 V to VDD + 0.3 V

Analog I/O Voltage to GND

−0.3 V to VDD + 0.3 V

REFIN to GND

−0.3 V to VDD + 0.3 V

Operating Temperature Range

−40°C to +85°C

Storage Temperature Range

−65°C to +125°C

Maximum Junction Temperature

150°C

LFCSP θJA Thermal Impedance

27.3°C/W

(Paddle-Soldered)

Reflow Soldering

Peak Temperature

260°C

Time at Peak Temperature

40 sec

1 GND = AGND = DGND = 0 V

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

This device is a high-performance RF integrated circuit with an

ESD rating of <0.5 kV and is ESD sensitive. Proper precautions

should be taken for handling and assembly.

TRANSISTOR COUNT

24202 (CMOS) and 918 (bipolar)

ESD CAUTION

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