Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFP31N50LPBF Datenblatt(PDF) 6 Page - Vishay Siliconix |
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IRFP31N50LPBF Datenblatt(HTML) 6 Page - Vishay Siliconix |
6 / 8 page www.vishay.com Document Number: 91220 6 S-81274-Rev. A, 16-Jun-08 IRFP31N50L, SiHFP31N50L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12d - Gate Charge Test Circuit Fig. 13a - Maximum Safe Operating Area Fig. 13b - Basic Gate Charge Waveform OPERATION IN THIS AREA LIMITED BY RDS(on) VDS, Drain-to-Source Voltage (V) 10us 100us 1ms 10ms TC = 25 °C TJ = 150 °C Single Pulse 1000 100 10 1 10 100 1000 Starting TJ, Junction Temperature(°C) ID TOP 14A 20A BOTTOM 30A 25 50 75 100 125 150 0 200 400 600 800 1000 Q GS Q GD Q G VG Charge V GS D.U.T. 3 mA V GS V DS I G I D 0.3 µF 0.2 µF 50 k Ω 12 V Current regulator Current sampling resistors Same type as D.U.T. + - |
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Ähnliche Beschreibung - IRFP31N50LPBF |
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