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IRFZ48RLPBF Datenblatt(Datasheet) 7 Page - Vishay Siliconix

Teile-Nr. IRFZ48RLPBF
Beschreibung  Power MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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 7 page
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Document Number: 91296
www.vishay.com
S-Pending-Rev. A, 22-Jul-08
7
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
Fig. 13b - Gate Charge Test Circuit
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91296.
Q
GS
Q
GD
Q
G
VG
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 k
Ω
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
* VGS = 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
RG




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