Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1022R Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI1022R Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 71331 S-81543-Rev. B, 07-Jul-08 Vishay Siliconix Si1022R Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 12.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V ± 150 nA TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 20 Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V 10 TJ = 85 °C 100 VDS = 60 V, VGS = 0 V 1µA On-State Drain Currenta ID(on) VDS = 10 V, VGS = 4.5 V 500 mA VDS = 7.5 V, VGS = 10 V 800 Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 200 mA 3.0 Ω TJ = 125 °C 5.0 VGS = 10 V, ID = 500 mA 1.25 TJ = 125 °C 2.25 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 100 mS Diode Forward Voltagea VSD VGS = 0 V, IS = 200 mA 1.3 V Dynamicb Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 30 pF Output Capacitance Coss 6 nC Reverse Transfer Capacitance Crss 2.5 Gate Charge Qg VDS = 10 V, ID = 250 mA, VGS = 4.5 V 0.6 Switchingb, c Turn-On Time t(on) VDD = 30 V, RL = 150 Ω, ID = 200 mA, VGEN = 10 V, RG = 10 Ω 25 ns Turn-Off Time t(off) 35 |
Ähnliche Teilenummer - SI1022R_08 |
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Ähnliche Beschreibung - SI1022R_08 |
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