Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1025X Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI1025X Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Vishay Siliconix Si1025X Document Number: 71433 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 P-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs • High-Side Switching • Low On-Resistance: 4 Ω • Low Threshold: - 2 V (typ.) • Fast Switching Speed: 20 ns (typ.) • Low Input Capacitance: 23 pF (typ.) • Miniature Package • Gate-Source ESD Protected: 2000 V BENEFITS • Ease in Driving Switches • Low Offset Voltage • Low-Voltage Operation • High-Speed Circuits • Easily Driven Without Buffer • Small Board Area APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid State Relays PRODUCT SUMMARY V(BR)DSS (min) (V) RDS(on) (Ω)VGS(th) (V) ID (mA) - 60 4 at VGS = - 10 V - 1 to - 3.0 - 500 Marking Code: D Top View 3 1 D2 G2 S1 5 2 4 6 D1 S2 G1 SC-89 Ordering Information: Si1025X-T1-E3 (Lead (Pb)-free) Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free) Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID - 200 - 190 mA TA = 85 °C - 145 - 135 Pulsed Drain Currentb IDM - 650 Continuous Source Current (Diode Conduction)a IS - 450 - 380 Maximum Power Dissipationa TA = 25 °C PD 280 250 mW TA = 85 °C 145 130 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V RoHS COMPLIANT |
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