Datenblatt-Suchmaschine für elektronische Bauteile |
|
SI1046X-T1-E3 Datenblatt(PDF) 2 Page - Vishay Siliconix |
|
SI1046X-T1-E3 Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 74594 S-81543-Rev. B, 07-Jul-08 Vishay Siliconix Si1046X New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 20.5 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 2.12 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.35 0.95 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 30 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 85 °C 10 On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 4.5 V 2.5 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 0.606 A 0.336 0.420 Ω VGS = 2.5 V, ID = 0.505 A 0.395 0.501 VGS = 1.8 V, ID = 0.150 A 0.438 0.660 Forward Transconductance gfs VDS = 10 V, ID = 0.606 A 2.1 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 66 pF Output Capacitance Coss 17 Reverse Transfer Capacitance Crss 7 Total Gate Charge Qg VDS = 10 V, VGS = 5 V, ID = 0.606 A 0.99 1.49 nC VDS = 10 V, VGS = 4.5 V, ID = 0.606 A 0.92 1.38 Gate-Source Charge Qgs 0.15 Gate-Drain Charge Qgd 0.30 Gate Resistance Rg f = 1 MHz 212 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 20.8 Ω ID ≅ 0.48 A, VGEN = 4.5 V, Rg = 1 Ω 17 26 ns Rise Time tr 19 28.5 Turn-Off Delay Time td(off) 76 114 Fall Time tf 27 41 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM 2.5 A Body Diode Voltage VSD IS = 0.48 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 1.0 A, dI/dt = 100 A/µs 16 24 nC Body Diode Reverse Recovery Charge Qrr 4.8 7.2 ns Reverse Recovery Fall Time ta 12.3 Reverse Recovery Rise Time tb 3.7 |
Ähnliche Teilenummer - SI1046X-T1-E3 |
|
Ähnliche Beschreibung - SI1046X-T1-E3 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |