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SI1073X-T1-GE3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI1073X-T1-GE3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 74285 S-82617-Rev. C, 03-Nov-08 www.vishay.com 3 Vishay Siliconix Si1073X New Product TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Qg - Gate Charge 0 2 4 6 8 0.0 0.6 1.2 1.8 2.4 3.0 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 5 V VGS = 3 V VGS = 4 V 0.00 0.08 0.16 0.24 0.32 0.40 0246 8 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 012 34 567 Qg - Total Gate Charge (nC) ID = 0.94 A VDS = 15 V VDS = 24 V Transfer Characteristics Curves vs. Temp. Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 01234 VGS - Gate-to-Source Voltage (V) TC = 125 °C 25 °C TC = - 55 °C 0 100 200 300 400 500 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Coss Ciss Crss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 4.5 V ID = 0.83 A VGS = 10 V ID = 0.94 A |
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