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SI1304BDL Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer SI1304BDL
Bauteilbeschribung  N-Channel 30-V (D-S) MOSFET
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Si1304BDL
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Document Number: 73480
S–52057—Rev. B, 03–Oct–05
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 mA
30
V
VDS Temperature Coefficient
DVDS/TJ
I = 250
mA
27.3
mV/
_C
VGS(th) Temperature Coefficient
DVGS(th)/TJ
ID = 250 mA
3
mV/
_C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.6
1.3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = "12 V
"100
nA
Zero Gate Voltage Drain Current
I
VDS = 30 V, VGS = 0 V
1
A
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V, TJ = 70_C
5
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 4.5 V
4
A
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 0.9
0.216
0.270
W
Drain-Source On-State Resistancea
rDS(on)
VGS =2.5 V, ID = 0.75
0.308
0.385
W
Forward Transconductancea
gfs
VDS = 15 V, ID = 0.9
2
S
Dynamicb
Input Capacitance
Ciss
100
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
30
pF
Reverse Transfer Capacitance
Crss
20
p
Total Gate Charge
Q
VDS = 15 V, VGS = 4.5 V, ID = 0.9
1.8
2.7
Total Gate Charge
Qg
1.1
1.7
nC
Gate-Source Charge
Qgs
VDS = 15 V, VGS = 2.5 V, ID= 0.9
0.4
nC
Gate-Drain Charge
Qgd
0.6
Gate Resistance
Rg
f = 1 MHz
1.5
2.3
W
Turn-On Delay Time
td(on)
10
15
Rise Time
tr
VDD = 15 V, RL = 22 W
30
45
ns
Turn-Off Delay Time
td(off)
VDD = 15 V, RL = 22 W
ID ^ 0.68 A, VGEN = 4.5 V, Rg = 1 W
5
25
ns
Fall Time
tf
g
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25_C
0.31
A
Pulse Diode Forward Currenta
ISM
4
A
Body Diode Voltage
VSD
IS = 0.28 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
50
75
ns
Body Diode Reverse Recovery Charge
Qrr
I
0 28 A di/dt
100 A/
msT
25
_C
105
160
nC
Reverse Recovery Fall Time
ta
IF = 0.28 A, di/dt = 100 A/ms, TJ = 25_C
34
ns
Reverse Recovery Rise Time
tb
16
ns
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.


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