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SI1304BDL Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI1304BDL Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 7 page Si1304BDL Vishay Siliconix New Product www.vishay.com 2 Document Number: 73480 S–52057—Rev. B, 03–Oct–05 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 mA 30 V VDS Temperature Coefficient DVDS/TJ I = 250 mA 27.3 mV/ _C VGS(th) Temperature Coefficient DVGS(th)/TJ ID = 250 mA 3 mV/ _C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.6 1.3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current I VDS = 30 V, VGS = 0 V 1 A Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 70_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 4.5 V 4 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 0.9 0.216 0.270 W Drain-Source On-State Resistancea rDS(on) VGS =2.5 V, ID = 0.75 0.308 0.385 W Forward Transconductancea gfs VDS = 15 V, ID = 0.9 2 S Dynamicb Input Capacitance Ciss 100 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 30 pF Reverse Transfer Capacitance Crss 20 p Total Gate Charge Q VDS = 15 V, VGS = 4.5 V, ID = 0.9 1.8 2.7 Total Gate Charge Qg 1.1 1.7 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 2.5 V, ID= 0.9 0.4 nC Gate-Drain Charge Qgd 0.6 Gate Resistance Rg f = 1 MHz 1.5 2.3 W Turn-On Delay Time td(on) 10 15 Rise Time tr VDD = 15 V, RL = 22 W 30 45 ns Turn-Off Delay Time td(off) VDD = 15 V, RL = 22 W ID ^ 0.68 A, VGEN = 4.5 V, Rg = 1 W 5 25 ns Fall Time tf g 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25_C 0.31 A Pulse Diode Forward Currenta ISM 4 A Body Diode Voltage VSD IS = 0.28 A 0.8 1.2 V Body Diode Reverse Recovery Time trr 50 75 ns Body Diode Reverse Recovery Charge Qrr I 0 28 A di/dt 100 A/ msT 25 _C 105 160 nC Reverse Recovery Fall Time ta IF = 0.28 A, di/dt = 100 A/ms, TJ = 25_C 34 ns Reverse Recovery Rise Time tb 16 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
Ähnliche Teilenummer - SI1304BDL_08 |
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Ähnliche Beschreibung - SI1304BDL_08 |
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