SI1472DH datasheet(4/7 Pages) VISHAY

Teilenummer	SI1472DH

Bauteilbeschribung	N-Channel 30-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 73891

S-71344–Rev. B, 09-Jul-07

Vishay Siliconix

Si1472DH

New Product

TYPICAL CHARACTERISTICS

TA = 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.01

0.1

10

VSD – Source-to-Drain Voltage (V)

0

1

0.8

0.6

0.4

0.2

TJ = 150 °C

= 25 °C

TJ

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ – Temperature (°C)

rDS(on) vs VGS vs Temperature

Single Pulse Power

0.02

0.04

0.06

0.08

0.10

02468

10

VGS – Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

I D = 4.2 A

0

20

30

5

15

Time (sec)

25

1

600

100

0.001

0.1

10

0.01

10

Safe Operating Area, Junction-to-Ambient

*VGS

minimum VGS at which rDS(on) is specified

100

0.1

1

10

100

0.01

10

0.1

VDS – Drain-to-Source Voltage (V)

1

*Limited by rDS(on)

TA = 25 °C

Single Pulse

P(t) = 100 ms

P(t) = 1 s

dc

P(t) = 10 ms

P(t) = 10 s

BVDSS Limited

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