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SI1555DL-T1-E3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI1555DL-T1-E3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 8 page Si1555DL Vishay Siliconix www.vishay.com 4 Document Number: 71079 S-50245—Rev. D, 21-Feb-05 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 0 1234 5 TJ = 150_C TJ = 25_C ID = 0.66 A 1 0.1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) 0 3 5 1 2 Single Pulse Power Time (sec) 4 1 100 600 10 10−1 10−2 10−3 10−3 10−2 1 10 600 10−1 10−4 100 −0.4 −0.3 −0.2 −0.1 −0.0 0.1 0.2 −50 −25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 400_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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