Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1869DH Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI1869DH Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si1869DH Document Number: 73449 S-61965-Rev. B, 09-Oct-06 www.vishay.com 1 Load Switch with Level-Shift FEATURES • TrenchFET® Power MOSFETS: 1.8 V Rated • ESD Protected: 2000 V On Input Switch, VON/OFF • 165 m Ω Low r DS(on) • 1.8 to 20 V Input • 1.5 to 8 V Logic Level Control • Low Profile, Small Footprint SC70-6 Package • Adjustable Slew-Rate APPLICATIONS • Level Shift for Portable Devices PRODUCT SUMMARY VDS2 (V) rDS(on) (Ω)ID (A) 1.8 to 20 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a P- and N-Channel MOSFET in a single SC70-6 package. The low on-resistance P-Channel TrenchFET is tailored for use as a load switch. The N-Chan- nel, with an external resistor, can be used as a level-shift to drive the P-Channel load-switch. The N-Channel MOSFET has internal ESD protection and can be driven by logic sig- nals as low as 1.5 V. The Si1869DH operates on supply lines from 1.8 to 20 V, and can drive loads up to 1.2 A. APPLICATION CIRCUITS VOUT GND LOAD VIN ON/OFF R2 R2 1 2, 3 C1 6 4 6 5 R1 Q1 Q2 Si1869DH Co Ci Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ 0 5 10 15 20 25 30 35 40 02 4 6 8 10 R2 (k Ω) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tr td(on) td(off) tf Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. The Si1869DH is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. COMPONENTS R1 Pull-Up Resistor Typical 10 k Ω to 1 MegaΩ* R2 Optional Slew-Rate Control Typical 0 to 100 k Ω* C1 Optional Slew-Rate Control Typical 1000 pF RoHS COMPLIANT |
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