Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1905BDH Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI1905BDH Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si1905BDH New Product Document Number: 74638 S-72340-Rev. B, 05-Nov-07 www.vishay.com 1 Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch for Portable Devices Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under Steady State conditions is 400 °C/W. PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) Qg (Typ) - 8 0.542 at VGS = - 4.5 V - 0.63 10.5 nC 0.798 at VGS = - 2.5 V - 0.52 1.2 at VGS = - 1.8 V - 0.20 Ordering Information: Si1905BDH-T1-E3 (Lead (Pb)-free) SOT-363 SC-70 (6-LEADS) Marking Code DJ XX Lot Traceability and Date Code Part # Code 6 4 1 2 3 5 Top View S1 G1 D2 D1 G2 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 8 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a, b TC = 25 °C ID - 0.63 A TC = 70 °C - 0.50 TA = 25 °C - 0.58a, b TA = 70 °C - 0.47a, b Pulsed Drain Current (10 µs Pulse Width) IDM - 1.8 Continuous Source-Drain Diode Currenta, b TC = 25 °C IS - 0.30 TA = 25 °C - 0.25a, b Maximum Power Dissipationa, b TC = 25 °C PD 0.357 W TC = 70 °C - 0.301 TA = 25 °C 0.301a, b TA = 70 °C 0.95a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 5 s RthJA 360 415 °C/W Steady State 400 460 Maximum Junction-to-Foot (Drain) Steady State RthJF 300 350 RoHS COMPLIANT |
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