Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1958DH-T1-E3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI1958DH-T1-E3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 74340 S-70532-Rev. B, 26-Mar-07 Vishay Siliconix Si1958DH New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Forward Diode Voltage Threshold Voltage 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 TJ = 150 °C TJ = 25 °C VSD − Source-to-Drain Voltage (V) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-Source Voltage Single Pulse Power 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 012345 VGS - Gate-to-Source Voltage (V) ID = 1.3 A TA = 125 °C TA = 25 °C 0 1 5 Time (sec) 3 4 1600 10 0.1 0.01 2 100 Safe Operating Area, Junction-to-Case 0.01 0.1 1 10 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified TA = 25 °C Single Pulsed BVDSS Limited *Limited by r DS(on) 100 µs 1 ms 10 ms 100 ms 1 s 10 s DC IDM Limited ID(on) Limited |
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