Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1988DH-T1-E3 Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI1988DH-T1-E3 Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si1988DH New Product Document Number: 74296 S-62109-Rev. A, 23-Oct-06 www.vishay.com 1 Dual N-Channel 20-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch for Portable Applications PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) a Qg (Typ) 20 0.168 at VGS = 4.5 V 1.3a 1.6 nC 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V 1.3a Marking Code CF XX Lot Traceability and Date Code Part # Code SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View S1 G1 D2 D1 G2 S2 Ordering Information: Si1988DH-T1-E3 (Lead (Pb)-free) N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 220 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 1.3a A TC = 70 °C 1.3a TA = 25 °C 1.3a, b, c TA = 70 °C 1.3a, b, c Pulsed Drain Current IDM 4 Continuous Source-Drain Diode Current TC = 25 °C IS 1.0 TA = 25 °C 0.61b, c Maximum Power Dissipation TC = 25 °C PD 1.25 W TC = 70 °C 0.8 TA = 25 °C 0.74b, c TA = 70 °C 0.47b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 5 sec RthJA 130 170 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 80 100 RoHS COMPLIANT |
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