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SI5410DU-T1-GE3 Datenblatt(PDF) 5 Page - Vishay Siliconix

Teilenummer SI5410DU-T1-GE3
Bauteilbeschribung  N-Channel 40-V (D-S) MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI5410DU-T1-GE3 Datenblatt(HTML) 5 Page - Vishay Siliconix

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Document Number: 69827
S-81448-Rev. B, 23-Jun-08
www.vishay.com
5
Vishay Siliconix
Si5410DU
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
10
20
30
40
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Package Limited
Power Derating
0
5
10
15
20
25
30
35
25
50
75
100
125
150
TC - Case Temperature (°C)


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