Datenblatt-Suchmaschine für elektronische Bauteile |
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SI5410DU-T1-GE3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI5410DU-T1-GE3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 69827 S-81448-Rev. B, 23-Jun-08 www.vishay.com 3 Vishay Siliconix Si5410DU New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS =10thru 4 V VGS =3 V 0.010 0.013 0.016 0.019 0.022 0.025 0 5 10 15 20 25 30 ID - Drain Current (A) VGS =10 V VGS =4.5 V 0 2 4 6 8 10 0 5 10 15 20 25 ID =9.8 A Qg - TotalGateCharge(nC) VDS =32 V VDS =20 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS -Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 35 40 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ - JunctionTemperature(°C) ID =6.6 A VGS =10 V |
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