SI5424DC datasheet(3/7 Pages) VISHAY

Teilenummer	SI5424DC

Bauteilbeschribung	N-Channel 30-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Si5424DC

Vishay Siliconix

New Product

Document Number: 73776

S–60216—Rev. A, 20-Feb-06

www.vishay.com

3

TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)

Coss

Crss

0.01

0.02

0.03

0.04

0

8

16

24

32

40

0

2

4

6

8

10

0

6

12

18

24

0.6

0.8

1.0

1.2

1.4

1.6

1.8

–50

–25

0

25

50

75

100

125

150

0

300

600

900

1200

1500

0

5

10

15

20

25

30

Ciss

VGS = 10 V, ID = 4.8 A

Gate Charge

On-Resistance vs. Drain Current and Gate Voltage

Qg – Total Gate Charge (nC)

VDS – Drain-to-Source Voltage (V)

ID – Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ – Junction Temperature (_C)

VGS = 10 V

0

1

2

3

4

5

0.0

0.6

1.2

1.8

2.4

3.0

0

10

20

30

40

0.0

0.6

1.2

1.8

2.4

3.0

VGS = 10 thru 5 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

VGS = 4.5 V

VDS = 15 V

VDS = 24 V

ID = 6 A

VGS = 3 V

VGS = 2 V

VGS = 4 V

TJ = 25 _C

VGS = 4.5 V,

ID = 4.2 A

TJ = 125 _C

TJ = – 55 _C

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