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SI5432DC-T1-GE3 Datenblatt(PDF) 3 Page - Vishay Siliconix

Teilenummer SI5432DC-T1-GE3
Bauteilbeschribung  N-Channel 20-V (D-S) MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI5432DC-T1-GE3 Datenblatt(HTML) 3 Page - Vishay Siliconix

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Document Number: 68925
S-82293-Rev. A, 22-Sep-08
www.vishay.com
3
Vishay Siliconix
Si5432DC
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS = 5 thru 2.5 V
VGS = 1.5 V
VGS = 2 V
VGS = 1 V
0.010
0.012
0.014
0.016
0.018
0.020
0.022
0.024
0
6
12
18
24
30
ID - Drain Current (A)
VGS =4.5 V
VGS =2.5 V
0.026
0
2
4
6
8
10
0
5
10
15
20
25
ID = 8.3 A
Qg - Total Gate Charge (nC)
VDS = 16 V
VDS = 10 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = 125 °C
TC = - 55 °C
Crss
0
300
600
900
1200
1500
0
5
10
15
20
Ciss
VDS - Drain-to-Source Voltage (V)
Coss
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
VGS = 4.5 V, 2.5 V
ID = 8.3 A


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