SI5485DU-T1-GE3 datasheet(5/7 Pages) VISHAY

Teilenummer	SI5485DU-T1-GE3

Bauteilbeschribung	P-Channel 20-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 73779

S-81448-Rev. C, 23-Jun-08

www.vishay.com

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Vishay Siliconix

Si5485DU

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

8

16

24

32

0

25

50

75

100

125

150

Package Limited

TC - Case Temperature (°C)

Power Derating

0

5

10

15

20

25

30

35

25

50

75

100

125

150

TC - Case Temperature (°C)

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Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
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Ähnliche Teilenummer - SI5485DU-T1-GE3

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