SI5499DC-T1-E3 datasheet(1/8 Pages) VISHAY

Teilenummer	SI5499DC-T1-E3

Bauteilbeschribung	P-Channel 1.5-V (G-S) MOSFET

Download	8 Pages

Scroll/Zoom	100%

Hersteller	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

1 / 8 page

Vishay Siliconix

Si5499DC

New Product

Document Number: 73321

S-80193-Rev. B, 04-Feb-08

www.vishay.com

1

P-Channel 1.5-V (G-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET: 1.5 V Rated

•

Ultra-Low On-Resistance

APPLICATIONS

•

Load Switch for Portable Devices

- Guaranteed Operation at VGS = 1.5 V Critical for

Optimized Design and Longer Battery Life

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

e

Qg (Typ.)

- 8

0.036 at VGS = - 4.5 V

- 6

14 nC

0.045 at VGS = - 2.5 V

- 6

0.056 at VGS = - 1.8 V

- 6

0.077 at VGS = - 1.5 V

- 6

Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free)

Marking Code

BP

XXX

Lot Traceability

and Date Code

Part #

Code

Bottom View

1206-8 ChipFET

®

D

G

D

S

1

S

G

D

P-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. See Solder Profile (http://www.vishay.com/ppg?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required

to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 8

V

Gate-Source Voltage

VGS

± 5

Continuous Drain Current (TJ = 150 °C)

a, b

TC = 25 °C

ID

- 6e

A

TC = 70 °C

- 6e

TA = 25 °C

- 6a, b, e

TA = 70 °C

- 5.6a, b

Pulsed Drain Current (10 µs Pulse Width)

IDM

- 25

Continuous Source-Drain Diode Currenta, b

TC = 25 °C

IS

- 5.2

TA = 25 °C

- 2.1a, b

Maximum Power Dissipationa, b

TC = 25 °C

PD

6.2

W

TC = 70 °C

4

TA = 25 °C

2.5a, b

TA = 70 °C

1.6a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

RoHS

COMPLIANT

Ähnliche Beschreibung - SI5499DC-T1-E3

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	SI3499DV	91Kb / 6P	P-Channel 1.5-V (G-S) MOSFET Rev. A, 18-Oct-04
	SI3499DV	91Kb / 6P	P-Channel 1.5-V (G-S) MOSFET Rev. A, 18-Oct-04
	SI8435DB	120Kb / 8P	P-Channel 1.5-V (G-S) MOSFET Rev. D, 08-Sep-08
	SI3499DV	235Kb / 10P	P-Channel 1.5 V (G-S) MOSFET 01-Jan-2022
	SI3495DV	98Kb / 6P	P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET Rev. B, 02-Jul-07
	SI1032R	121Kb / 5P	N-Channel 1.5-V (G-S) MOSFET Rev. E, 07-Jul-08
	SI8404DB	260Kb / 8P	N-Channel 1.5-V (G-S) MOSFET Rev. C, 08-Sep-08
	SI1032R	199Kb / 9P	N-Channel 1.5 V (G-S) MOSFET Rev. F, 08-Nov-10
	SI1032R	135Kb / 7P	N-Channel 1.5 V (G-S) MOSFET 01-Jan-2022
	SI5920DC	111Kb / 7P	Dual N-Channel 1.5-V (G-S) MOSFET Rev. C, 07-May-07

More results

SI5499DC-T1-E3 Datenblatt(PDF) 1 Page - Vishay Siliconix

SI5499DC-T1-E3 Datenblatt(HTML) 1 Page - Vishay Siliconix

Ähnliche Teilenummer - SI5499DC-T1-E3

Ähnliche Beschreibung - SI5499DC-T1-E3

Html Pages

1 2 3 4 5 6 7 8

Datenblatt Download

Link URL