SI5855CDC datasheet(5/9 Pages) VISHAY

Teilenummer	SI5855CDC

Bauteilbeschribung	P-Channel 20-V (D-S) MOSFET With Schottky Diode

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Hersteller	VISHAY [Vishay Siliconix]

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5 / 9 page

Document Number: 68910

S-82299-Rev. A, 22-Sep-08

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Vishay Siliconix

Si5855CDC

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Threshold Voltage

0.2

0.3

0.4

0.5

0.6

0.7

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

Single Pulse Power

0

1

2

3

4

5

0.001

0.01

0.1

1

10

100

Time (s)

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

Limited byRDS(on)*

BVDSS Limited

1ms

100 µs

10 ms

100 ms

1s,10s

DC

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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