Datenblatt-Suchmaschine für elektronische Bauteile |
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TSHA5202 Datenblatt(PDF) 1 Page - Vishay Siliconix |
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TSHA5202 Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 81019 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.7, 05-Sep-08 151 Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors DESCRIPTION The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λ p = 875 nm • High reliability • Angle of half intensity: ϕ = ± 12° • Low forward voltage • Suitable for high pulse current operation • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Infrared remote control and free air data transmission systems • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity 94 8390 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSHA5200 40 ± 12 875 600 TSHA5201 50 ± 12 875 600 TSHA5202 60 ± 12 875 600 TSHA5203 65 ± 12 875 600 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHA5200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5201 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5203 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 2.5 A Power dissipation PV 180 mW |
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