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Document Number: 94393

6

Revision: 11-Aug-08

ST110SPbF Series

(Stud Version), 110 A

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

0.1

1

10

100

0.001

0.01

0.1

1

10

100

VGD

IGD

(b)

(a)

(1)

(2)

(3)

Instantaneous Gate Current (A)

a) Recommended load line for

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

Frequency Limited by PG(AV)

rated di/dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

Device: ST110S Series

Rectangular gate pulse

(4)

1

-

Thyristor

2

-

Essential part marking

3

-

0 = Converter grade

4

9

-

Lead (Pb)-free

-

S = Compression bonding stud

8

-

V = Glass-metal seal (only up to 1200 V)

5

-

6

-

P = Stud base 1/2"-20UNF- 2 A threads

7

-

0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

None = Ceramic housing (over 1200 V)

Device code

5

1

3

24

67

8

9

ST

11

0

S

16

P

0

V

PbF

LINKS TO RELATED DOCUMENTS

Dimensions

http://www.vishay.com/doc?95078