Datenblatt-Suchmaschine für elektronische Bauteile |
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ST173C12CHK1LP Datenblatt(PDF) 7 Page - Vishay Siliconix |
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ST173C12CHK1LP Datenblatt(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Document Number: 94366 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 29-Apr-08 7 ST173CPBF Series Inverter Grade Thyristors (Hockey PUK Version), 330 A Vishay High Power Products Fig. 16 - Maximum On-State Energy Power Loss Characteristics Fig. 17 - Gate Characteristics Pulse Basewidth (µs) 10 100 1000 10 000 10 100 1000 10 000 t p ST173C..C Series Sinusoidal pulse 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse 0.3 Pulse Basewidth (µs) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse t p ST173C..C Series Rectangular pulse dI/dt = 50 A/µs 0.3 0.1 1 10 100 0.001 Instantaneous Gate Current (A) 0.01 0.1 1 10 100 (b) V GD I GD (1) (2) (3) Device: ST173C..C Series (4) Frequency limited by P G(AV) (1) P GM = 10 W, tp = 20 ms (2) P GM = 20 W, tp = 10 ms (3) P GM = 40 W, tp = 5 ms (4) P GM = 60 W, tp = 3.3 ms Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; t r ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω t r ≤ 1 µs (a) |
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