Datenblatt-Suchmaschine für elektronische Bauteile |
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UH3B Datenblatt(PDF) 2 Page - Vishay Siliconix |
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UH3B Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 5 page New Product UH3B, UH3C & UH3D Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89109 Revision: 29-May-08 2 Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Note: (1) Free air, mounted on recommended copper pad area. Thermal resistance RθJA - junction to ambient, RθJM - junction to mount Note: (1) Automotive grade AEC Q101 qualified ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage (1) IF = 1.5 A IF = 3.0 A TA = 25 °C VF 0.85 0.95 - 1.05 V IF = 1.5 A IF = 3.0 A TA = 125 °C 0.65 0.75 - 0.90 Reverse current (2) rated VR TA = 25 °C TA = 125 °C IR - 15 - 100 µA Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A TA = 25 °C trr 14 25 ns Typical reverse recovery time IF = 1.0 A, dI/dt = 50 A/µs, VR = 30 V, lrr = 0.1 IRM 23 40 Typical softness factor (tb/ta) IF = 3.0 A, dI/dt = 200 A/µs, VR = 200 V TA = 125 °C S1.0 - Typical reverse recovery current IRM 5.0 7.0 A Typical stored charge Qrr 60 - nC Typical junction capacitance 4.0 V, 1 MHz CJ 42 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UH3B UH3C UH3D UNIT Typical thermal resistance (1) RθJA RθJM 95 12 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE UH3D-E3/57T 0.236 57T 850 7" diameter plastic tape and reel UH3D-E3/9AT 0.236 9AT 3500 13" diameter plastic tape and reel UH3DHE3/57T (1) 0.236 57T 850 7" diameter plastic tape and reel UH3DHE3/9AT (1) 0.236 9AT 3500 13" diameter plastic tape and reel |
Ähnliche Teilenummer - UH3B |
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Ähnliche Beschreibung - UH3B |
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