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UH4PCC Datenblatt(PDF) 1 Page - Vishay Siliconix

Teilenummer UH4PCC
Bauteilbeschribung  High Current Density Surface Mount Ultrafast Rectifiers
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
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UH4PCC Datenblatt(HTML) 1 Page - Vishay Siliconix

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New Product
UH4PBC, UH4PCC & UH4PDC
Vishay General Semiconductor
Document Number: 88991
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount Ultrafast Rectifiers
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Low forward voltage drop, low power loss
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Halogen-free
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC-Q101 qualified)
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
high reliability/automotive grade (AEC-Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test, HE3 and HM3 suffix meets JESD 201 class 2
whisker test
TYPICAL APPLICATIONS
For
use
in
high
frequency
rectification
and
freewheeling application in switching mode converters
and inverters for consumer computer, automotive and
telecommunication applications.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 2.0 A
VRRM
100 V, 150 V, 200 V
IFSM
40 A
trr
25 ns
VF at IF = 2.0 A
0.77 V
TJ max.
175 °C
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH4PBC
UH4PCC
UH4PDC
UNIT
Device marking code
H4BC
H4CC
H4DC
Maximum repetitive peak reverse voltage
VRRM
100
150
200
V
Maximum average forward rectified
current (Fig. 1)
total device
per diode
IF(AV)
4.0
2.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load per diode
IFSM
40
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C


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