TIP32A datasheet(2/5 Pages) STMICROELECTRONICS

Teilenummer	TIP32A

Bauteilbeschribung	COMPLEMENTARY SILICON POWER TRANSISTORS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

62. 5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-of f

Current (IB =0)

for T IP31A/ 32A

VCE =30 V

for T IP31C/ 32B/32C

VCE =60 V

0. 3

mA

ICES

Collector Cut-of f

Current (VBE =0)

for T IP31A/ 32A

VCE =60 V

for T IP/ 32B

VCE =80 V

for T IP31C/ 32C

VCE =100 V

0. 2

mA

IEBO

Emitter Cut-of f Current

(IC =0)

VEB =5 V

1

mA

VCEO(s us)

∗ Collector-Emitter

Sustaining Volt age

(IB =0)

IC =30 mA

for TIP31A/32A

for TIP32B

for TIP31C/32C

60

80

100

V

VCE(sat)

∗ Collector-Emitter

Sat uration Voltage

IC =3 A

IB =375 mA

1. 2

V

VBE(on)

∗ Base-Emitter Voltage

IC =3 A

VCE =4 V

1. 8

V

hFE

∗

DC Current G ain

IC =1 A

VCE =4 V

IC =3 A

VCE =4 V

25

10

50

hfe

Small Signall Current

Gain

IC =0.5 A

VCE =10 V f = 1 KHz

IC =0.5 A

VCE =10 V f = 1 MHz

20

3

∗ Pulsed : pulse duration = 300 µs, duty cycle ≤ 2%

For PNP types voltage and current values are negative.

Safe Operating Area

Derating Curves

TIP31A/TIP31C/TIP32A/TIP32B/TIP32C

2/5

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