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TPDV1025 Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer TPDV1025
Bauteilbeschribung  ALTERNISTORS
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TPDV1025 Datenblatt(HTML) 1 Page - STMicroelectronics

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TPDV 625 ---> 1225
March 1995
ALTERNISTORS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
° conduction angle)
Tc = 85
°C25
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°C)
tp = 2.5 ms
390
A
tp = 8.3 ms
250
tp = 10 ms
230
I2tI2t value
tp = 10 ms
265
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
20
A/
µs
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
TOP 3
(Plastic)
A1
A2
G
.
HIGH COMMUTATION : > 88 A/ms (400Hz)
.
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : EB81734)
.
HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
DESCRIPTION
Symbol
Parameter
TPDV
Unit
625
825
1025
1225
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
600
800
1000
1200
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TPDV 625 ---> 1225 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
1/5


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