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TS4900ID Datenblatt(PDF) 3 Page - STMicroelectronics |
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TS4900ID Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 19 page TS4900 3/19 ELECTRICAL CHARACTERISTICS V CC = +5V, GND = 0V, Tamb = 25°C (unless otherwise specified) VCC = +3.3V, GND = 0V, Tamb = 25°C (unless otherwise specified) 3) Symbol Parameter Min. Typ. Max. Unit ICC Supply Current No input signal, no load 68 mA ISTANDBY Standby Current 1) No input signal, Vstdby = Vcc, RL = 8 Ω 1. Standby mode is actived when Vstdby is tied to Vcc 10 1000 nA Voo Output Offset Voltage No input signal, RL = 8 Ω 520 mV Po Output Power THD = 1% Max, f = 1kHz, RL = 8 Ω 0.7 W THD + N Total Harmonic Distortion + Noise Po = 250mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8 Ω 0.15 % PSRR Power Supply Rejection Ratio2) f = 217Hz, RL = 8 Ω, RFeed = 22KΩ, Vripple = 200mV rms 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the surimposed sinus signal to Vcc @ f = 217Hz 75 dB Φ M Phase Margin at Unity Gain RL = 8Ω, CL = 500pF 70 Degrees GM Gain Margin RL = 8Ω, CL = 500pF 20 dB GBP Gain Bandwidth Product RL = 8Ω 2MHz Symbol Parameter Min. Typ. Max. Unit ICC Supply Current No input signal, no load 5.5 8 mA ISTANDBY Standby Current 1) No input signal, Vstdby = Vcc, RL = 8 Ω 1. Standby mode is actived when Vstdby is tied to Vcc 10 1000 nA Voo Output Offset Voltage No input signal, RL = 8 Ω 520 mV Po Output Power THD = 1% Max, f = 1kHz, RL = 8 Ω 300 mW THD + N Total Harmonic Distortion + Noise Po = 250mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8 Ω 0.15 % PSRR Power Supply Rejection Ratio2) f = 217Hz, RL = 8 Ω, RFeed = 22KΩ, Vripple = 200mV rms 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the surimposed sinus signal to Vcc @ f = 217Hz 3. All electrical values are made by correlation between 2.6V and 5V measurements 75 dB Φ M Phase Margin at Unity Gain RL = 8Ω, CL = 500pF 70 Degrees GM Gain Margin RL = 8Ω, CL = 500pF 20 dB GBP Gain Bandwidth Product RL = 8Ω 2MHz |
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