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2SJ294 Datenblatt(PDF) 3 Page - Hitachi Semiconductor |
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2SJ294 Datenblatt(HTML) 3 Page - Hitachi Semiconductor |
3 / 3 page 40 30 20 10 0 50 100 150 200 Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS –1 –10 –100 –2 –5 –20 –50 Maximum Safe Operation Area –200 –100 –20 –50 –10 –2 –5 –1 –0.2 –0.5 100 µs 10 µs 1 ms PW = 10 ms (1shot) DC Operation (Tc = 25 °C) Operation in this area is limited by R DS(on) Ta = 25 °C 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m Pulse Width PW (S) 100 m 1 10 DM P PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 3.57 °C/W, Tc = 25 °C θ γ θ θ Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse Normalized Transient Thermal Impedance vs. Pulse Width 2SJ294 |
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