303 S. Technology Court

Phone: (800) SMI-MMIC

http://www.sirenza.com

Broomfield, CO 80021

2

EDS-103478 Rev G

SDM-09120 925-960 MHz 130W Power Amp Module

Pin Description

Pin #

Function

Description

2,4,7,9

Ground

Module Topside ground.

3

RF Input

Internally DC blocked

LDMOS FET Q3 and Q4 drain bias. See Note 1.

8

RF Output

Internally DC blocked

10

LDMOS FET Q1 and Q2 drain bias. See Note 1.

Flange

Ground

Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures

optimal performance and the highest reliability. See Sirenza applications note AN-054 Detailed Installation Instructions for

Power Modules.

Caution: ESD Sensitive

Appropriate precaution in handling, packaging

and testing devices must be observed.

Note 1:

Internal RF decoupling is included on all bias leads. No addi-

tional bypass elements are required, however some applica-

accommodate modulated signals.

Note 2:

or after application of drain voltage to prevent potentially

destructive oscillations. Bias voltages should never be applied

to a module unless it is properly terminated on both input and

output.

Note 3:

the same module by as much as ±0.10 volts due to the normal

die-to-die variation in threshold voltage for LDMOS transistors.

Note 4:

device temperature. External temperature compensation may

be required. See Sirenza application notes AN-067 LDMOS

Bias Temperature Compensation.

Note 5:

This module was designed to have it's leads hand

soldered to an adjacent PCB. The maximum soldering iron tip

temperature should not exceed 700° F, and the soldering iron

tip should not be in direct contact with the lead for longer than

10 seconds. Refer to app note AN054 (www.sirenza.com) for

further installation instructions.

Absolute Maximum Ratings

Parameters

Value

Unit

V

RF Input Power

+43

dBm

Load Impedance for Continuous Operation

Without Damage

5:1

VSWR

Control (Gate) Voltage, VDD = 0 VDC

15

V

Output Device Channel Temperature

+200

ºC

Operating Temperature Range

-20 to

+90

ºC

Storage Temperature Range

-40 to

+100

ºC

Operation of this device beyond any one of these limits may cause per-

manent damage. For reliable continuous operation see typical setup val-

ues specified in the table on page one.

+28V DC

Q4

Q3

Q2

Q1

Balun

10

8

6

9

7

+28V DC

o

180

o

0

+3V DC to +6 V DC

0

o

180

o

+3V DC to +6 V DC

4

2

5

3

1

Balun

Simplified Device Schematic