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STB12NM50T4 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STB12NM50T4
Bauteilbeschribung  N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET
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Direct Link  http://www.st.com
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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance VDS = 15 V , ID = 6 A
5.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
1000
180
25
pF
pF
pF
COSS eq (3).
Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 400 V
90
pF
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250 V, ID = 6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
20
10
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V, ID = 12 A,
VGS = 10 V
(see Figure 20)
28
8
18
39
nC
nC
nC
Rg
Gate Input Resistance
f = 1MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.6
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
12
48
A
A
VSD (1)
Forward On Voltage
ISD = 12 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100V
(see Figure 18)
270
2.23
16.5
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100V, Tj = 150°C
(see Figure 18)
340
3
18
ns
µC
A


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