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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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STC2222A Datenblatt(PDF) 1 Page - Suntac Electronic Corp. |
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STC2222A Datenblatt(HTML) 1 Page - Suntac Electronic Corp. |
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1 / 2 page  1. Emitter 2. Base 3. Collector TO-92 1 STC2222A NPN Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 40V • Collector Power Dissipation: PC (max)=625mW • Refer STC2222 for graphs NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% * Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 75 V BVCEO Collector Emitter Breakdown Voltage IC=10mA, IB=0 40 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V ICBO Collector Cut-off Current VCB=60V, IE=0 0.01 µA IEBO Emitter Cut-off Current VEB=3V, IC=0 10 nA hFE DC Current Gain IC=0.1mA, VCE=10V VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, *IC=150mA VCE=10V, *IC=500mA 35 50 75 100 40 300 VCE (sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA 0.3 1 V V VBE (sat) * Base-Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA 0.6 1.2 2 V V fT Current Gain Bandwidth Product VCE=20V, IC=20mA f=100MHz 300 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF tON Turn On Time VCC=30V, IC=150mA IB1=15mA, VBE(off)=0.5V 35 ns tOFF Turn Off Time VCC=30V, IC=150mA IB1=IB2=15mA 285 ns NF Noise Figure IC=100µA, VCE=10V RS=IKΩ, f=1KHz 4dB |
Ähnliche Teilenummer - STC2222A |
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Ähnliche Beschreibung - STC2222A |
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