2

TP2635/TP2640

Package

I

I

Power Dissipation

I

@ T

SO-8

-210mA

-1.25A

24

-210mA

-1.25A

TO-92

-180mA

-0.8A

1.0W

125

170

-180mA

-0.8A

Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV

DSS

TP2640

-400

V

V

TP2635

-350

Gate Threshold Voltage

-0.8

-2.0

V

Change in V

5.0

Gate Body Leakage

-100

nA

Zero Gate Voltage Drain Current

-1

-10

-1

mA

T

ON-State Drain Current

0.7

12

15

11

15

V

11

15

Change in R

0.75

G

FS

Forward Transconductance

200

m

V

Input Capacitance

300

C

OSS

Common Source Output Capacitance

50

pF

C

RSS

Reverse Transfer Capacitance

12

Turn-ON Delay Time

10

t

r

Rise Time

15

t

d(OFF)

Turn-OFF Delay Time

60

Fall Time

40

V

SD

Diode Forward Voltage Drop

-1.8

V

V

t

rr

Reverse Recovery Time

300

ns

V

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

A

Ω

Drain-to-Source

Breakdown Voltage

V

f = 1 MHz

V

ns

Static Drain-to-Source

ON-State Resistance

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

Switching Waveforms and Test Circuit