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BCW67 Datenblatt(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer BCW67
Bauteilbeschribung  PNP General Purpose Transistors
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

BCW67 Datenblatt(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
SMD Type
Transistors
BCW67,BCW68
hFE Classification
TYPE
Rank
A
B
C
Marking
DAs
DBs
DCs
TYPE
Rank
F
G
H
Marking
DFs
DGs
DHs
BCW67
BCW68
Electrical Characteristics Ta = 25
Symbol
Testconditons
Min
Typ
Max
Unit
BCW67
-32
BCW68
-45
BCW67
-45
BCW68
-60
V(BR)EBO IE = -10ìA, IC =0
-5
V
BCW67
VCB =-32 V, IE =0
-20
BCW68
VCB =-45 V, IE =0
-20
BCW67
VCB =-32 V, IE =0, TA = 150
-20
BCW68
VCB =-45 V, IE =0, TA = 150
-20
IEBO
VEB =-4V, IC =0
-20
nA
A/F
35
B/G
50
C/H
80
A/F
75
B/G
120
C/H
180
A/F
100
160
250
B/G
160
250
400
C/H
250
350
630
IC = -100 mA, IB =-10 mA
-0.3
IC = -500 mA, IB =-50 mA
-0.7
IC = -100 mA, IB =-10 mA
-1.25
IC = -500 mA, IB =-50 mA
-2
fT
IC =-50 mA, VCE = -5 V, f = 20 MHz
200
MHz
Ccb
VCB = -10 V,f= 1 MHz
6
Ceb
VEB =-0.5V, f = 1MHz
60
* Pulse test: t
300ìs, D = 2%.
hFE
hFE
IC =10mA, VCE =1V
IC = 100 ìA, VCE =10V
pF
Emitter-base capacitance
Emitter-base breakdown voltage
ICBO
ICBO
Collector cutoff current
Base-emitter saturation voltage
*
VBE(sat)
Transition frequency
Collector-base capacitance
hFE
IC = -100 mA, VCE =-1V
Collector-emitter saturation voltage *
VCE(sat)
V
ìA
V(BR)CEO IC =-10 mA, IB =0
V
V
V(BR)CBO IC =-10 ìA, IE =0
nA
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain *
hFE-group
Emitter cutoff current
DC current gain *
hFE-group
DC current gain *
hFE-group


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