BCX41 datasheet(1/1 Pages) KEXIN

Teilenummer	BCX41

Bauteilbeschribung	Medium Power Transistor

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

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0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

Medium Power Transistor

BCX41

Features

SOT23 NPN silicon planar

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-emitter voltage

VCES

125

V

Collector-emitter voltage

VCEO

125

V

Emitter-base voltage

VEBO

5V

Continuous collector current

ICM

1A

Peak pulse current

IC

800

mA

Base current

IB

100

mA

Power dissipation

Ptot

330

mW

Operating and storage temperature range

Tj,Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter cut-off current

ICES

VCE=100V

VCE=100V,Tamb = 150

100

10

nA

ìA

ICEX

VCE=100V,VBE=0.2V, Tamb = 85

VCE=100V,VBE=0.2V, Tamb = 125

10

75

ìA

Emitter-base current

IEBO

VEB=4V

100

nA

Collector-emitter saturation voltage *

VCE(sat) IC=300mA, IB=30mA

0.9

V

Base-emitter saturation voltage *

VBE(sat) IC=300mA, IB=30mA

1.4

V

DC current gain *

hFE

IC=100ìA,VCE=1V

IC=100mA,VCE=1V

IC=200mA,VCE=1V

25

63

40

Transitional frequency

fT

IC=10mA, VCE=5V, f=20MHz

100

MHz

Output capacitance

Cobo

VCB=10V, f=1MHz,IE=Ie=0

12

pF

* Pulse test: tp = 300 ìs; d

0.02.

Marking

EK

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