Datenblatt-Suchmaschine für elektronische Bauteile |
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KDB5690 Datenblatt(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDB5690 Datenblatt(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Single Pulse Drain-Source Avalanche Energy * WDSS VDD =30V, ID = 32A 80 mJ Maximum Drain-Source Avalanche Current IAR 32 A Drain–Source Breakdown Voltage BVDSS VGS =0V, ID =250 A 60 V Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25 61 mV/ Zero Gate Voltage Drain Current IDSS VDS =48V, VGS =0V 1 A Gate-Body Leakage, Forward IGSSF VGS =20V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS =-20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS =VGS,ID = 250 A 22.5 4 V Gate Threshold Voltage Temperature Coefficient ID = 250 A, Referenced to 25 -6.4 mV/ VGS =10V, ID = 16 A 0.021 0.027 VGS =10V, ID =16A,TJ = 125 0.042 0.055 VGS =6V, ID =15 A, 0.024 0.032 On–State Drain Current ID(on) VGS =10V, VDS =5V 50 A Forward Transconductance gFS VDS =5V, ID =16A 32 S Input Capacitance Ciss 1120 pF Output Capacitance Coss 160 pF Reverse Transfer Capacitance Crss 80 pF Turn-On Delay Time td(on) 10 18 ns Turn-On Rise Time tr 9 18 ns Turn-Off Delay Time td(off) 24 39 ns Turn-Off Fall Time tf 10 18 ns Total Gate Charge Qg 23 33 nC Gate–Source Charge Qgs 3.9 nC Gate–Drain Charge Qgd 6.8 nC Maximum Continuous Drain-Source Diode Forward Current IS 32 A Drain-Source Diode Forward Voltage VSD VGS =0V, IS = 16 A * 0.92 1.2 V * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% VDS =1V, ID =16A,VGS =10V * m RDS(on) Static Drain-Source On-Resistance VDD =30V, ID =1A,VGS =10V, RGEN =6 * VDS =25V, VGS =0V,f = 1.0MHz KDB5690 |
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