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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1434 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1434 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type IC www.kexin.com.cn 1 SMD Type Transistors PNP Epitaxial Planar Silicon Transistor 2SA1434 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -15 V Collector current IC -100 mA Collector current (pulse) Icp -200 mA Collector dissipation PC 200 mW Junction temperature Tj 125 Storage temperature Tstg -55to+125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -40V, IE=0 -0.1 ìA Emitter cutoff current IEBO VEB = -10V, IC=0 -0.1 ìA DC current gain hFE VCE =-5V , IC = -10mA 500 800 1200 Gain bandwidth product fT VCE = -10V , IC = -10mA 100 MHz Output capacitance Cob VCB = -10V , f = 1.0MHz 4.8 pF Collector-emitter saturation voltage VCE(sat) IC = -50mA , IB = -1mA -0.2 -0.5 V Base-emitter saturation voltage VBE(sat) IC = -10ìA , IB = -1mA -0.8 -1.1 V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE =0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA , RBE = -50 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC =0 -15 V Marking Marking FL |
Ähnliche Teilenummer - 2SA1434 |
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Ähnliche Beschreibung - 2SA1434 |
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