Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3689 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3689 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 NPN Epitaxial Planar Silicon Transistor 2SC3689 Features Small Cob (Cob=1.5pF typ). Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 15 V Collector current IC 100 mA Collector current (pulse) Icp 200 mA Collector dissipation PC 200 mW Junction temperature Tj 125 Storage temperature Tstg -55to+125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 10V, IC=0 0.1 ìA DC current gain hFE VCE =5V , IC = 10mA 800 1500 3200 Gain bandwidth product fT VCE = 10V , IC = 10mA 200 MHz Output capacitance Cob VCB = 10V , f = 1.0MHz 1.5 pF Collector-emitter saturation voltage VCE(sat) IC = 50mA , IB =1mA 0.1 0.5 V Base-emitter saturation voltage VBE(sat) IC = 50mA , IB =1mA 0.8 1.1 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE =0 60 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA , RBE = 50 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC =0 15 V Marking Marking GY |
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