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TC4467COE Datenblatt(PDF) 2 Page - TelCom Semiconductor, Inc

Teilenummer TC4467COE
Bauteilbeschribung  LOGIC-INPUT CMOS QUAD DRIVERS
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Hersteller  TELCOM [TelCom Semiconductor, Inc]
Direct Link  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC4467COE Datenblatt(HTML) 2 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
Package Thermal Resistance
14-Pin CerDIP
RθJ-A ...................................... 100°C/W
RθJ-C ......................................... 23°C/W
14-Pin Plastic DIP
RθJ-A ......................................... 80°C/W
RθJ-C ......................................... 35°C/W
16-Pin Wide SOIC RθJ-A ......................................... 95°C/W
RθJ-C ......................................... 28°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1, High Input Voltage
Note 3
2.4
VDD
V
VIL
Logic 0, Low Input Voltage
Note 3
0
0.8
V
IIN
Input Current
0V
≤ VIN ≤ VDD
– 1
1
µA
Output
VOH
High Output Voltage
ILOAD = 100µA (Note 1)
VDD – 0.025
V
VOL
Low Output Voltage
ILOAD = 10mA (Note 1)
0.15
V
RO
Output Resistance
IOUT = 10mA, VDD = 18V
10
15
IPK
Peak Output Current
1.2
A
IDC
Continuous Output Current
Single Output
300
mA
Total Package
500
I
Latch-Up Protection
4.5V
≤ VDD ≤ 16V
500
mA
Withstand Reverse Current
Switching Time
tR
Rise Time
Figure 1
15
25
nsec
tF
Fall Time
Figure 1
15
25
nsec
tD1
Delay Time
Figure 1
40
75
nsec
tD2
Delay Time
Figure 1
40
75
nsec
Power Supply
IS
Power Supply Current
1.5
4
mA
VDD
Power Supply Voltage
Note 2
4.5
18
V
ELECTRICAL CHARACTERISTICS: Measured at TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
TRUTH TABLE
Part No.
TC4467 NAND
TC4468 AND
TC4469 AND/INV
INPUTS A
H
H
L
L
HH
L
L
HH
L
L
INPUTS B
H
L
H
L
HL
H
L
HL
H
L
OUTPUTS TC446X
LH
H
H
H
L
L
L
L
H
L
L
H = High
L = Low
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ......................... (GND – 5V) to (VDD + 0.3V)
Maximum Chip Temperature
Operating ........................................................ +150
°C
Storage ............................................. – 65
° to +150°C
Maximum Lead Temperature
(Soldering, 10 sec) ......................................... +300
°C
Operating Ambient Temperature Range
C Device .................................................. 0
° to +70°C
E Device ............................................. – 40
° to +85°C
M Device ........................................... – 55
° to +125°C
Package Power Dissipation (TA ≤ 70°C)
14-Pin CerDIP ................................................ 840mW
14-Pin Plastic DIP ........................................... 800mW
16-Pin Wide SOIC .......................................... 760mW


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