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BAR64-06 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer BAR64-06
Bauteilbeschribung  Silicon PIN Diode
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

BAR64-06 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Diodes
PIN Diodes
BAR64-04/05/06 (KAR64-04/05/06)
Features
High voltage current controlled
RF resistor for RF attenuator and swirches
Freqency range above 1 MHz
Low resistance and short carrier lifetime
For frequencies up to 3 GHz
0.4 +0.1
-0.1
2.9 +0.1
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.1
1
2
3
Unit: mm
SOT-23
0.1 +0.05
-0.01
Absolute Maximum Ratings Ta = 25℃
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Reverse breakdown voltage
VR
IR= 100uA
200
Forward voltage
VF
IF= 50 mA
1.1
IR1
VR=200 V
10
IR2
VR= 40V
1
IF = 1 mA, f = 100 MHz
20
IF = 10 mA, f = 100 MHz
3.8
IF = 100 mA, f = 100 MHz
1.35
Series inductance
LS
1.4
nH
Capacitance between terminals
CT
VR= 20 V, f= 1 MHz
0.35
pF
Reverse recovery time
trr
IF=10mA ,IR=6mA ,IR=3mA
1.55
us
Reverse voltage leakage current
uA
V
Forward resistance
rf
Ω
BAR64
BAR64-06
BAR64-05
BAR64-04
Parameter
Symbol
Rating
Unit
Peak Reverse Voltage
VR
200
V
Forward Current
IF
100
mA
BAR64
@ Ts≤ 90°C
BAR64-04/05/06
@ Ts ≤ 65°C
Thermal Resistance Junction to Ambient
BAR64
320
BAR64-04/05/06
500
Thermal Resistance Junction to Soldering Point BAR64
240
BAR64-04/05/06
340
Junction Temperature
TJ
150
Operating Temperature Range
Top
-55 to 150
Storage Temperature range
Tstg
-55 to 150
PD
250
mW
RθJA
RθJS
/W
Power Dissipation
IF = 10 mA, f = 100 MHz


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